Samsung unveils new NAND breakthrough promising massive energy savings for future devices

Samsung Electronics has announced a groundbreaking advancement in NAND technology, introducing a new flash structure that could reduce energy consumption by as much as 96% compared to conventional designs.

The development comes as AI-driven workloads put unprecedented pressure on global storage systems, forcing major companies like Samsung to pursue faster and more efficient NAND solutions.

Developed by a 34-member Samsung research team, the new NAND design combines ferroelectric materials with oxide semiconductors, allowing memory cells to operate at near-zero threshold voltage while still storing data reliably.

This architecture supports up to 5 bits per cell, matching the industry’s maximum density while drastically lowering power demands.

The breakthrough addresses a long-standing limitation in traditional NAND flash, where increasing layer counts to boost capacity typically results in steep rises in energy usage.

With AI models growing larger and on-device processing becoming more advanced, Samsung noted that the new NAND structure could redefine efficiency standards for both data centres and consumer electronics.

The South Korean-based tech giant also noted that once commercialised, the NAND innovation will enable major energy savings across AI data centres, mobile devices and edge systems, potentially reshaping the competitiveness of future storage hardware.